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Peter Friedrichs (Infineon Technologies AG, Germany)

Tutorial Day Sunday, Oct. 4 (8:45-17:00) PLENARIA Organizers: Tutorial Program 8:15 Registration Peter Friedrichs (Infineon Technologies AG, Germany)

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The product offering provides power stage solutions with highest efficiency Infineon‘s CoolSiC™ Schottky diodes ranging from 600V-1200V improve

Infineon acquires SiC specialist Siltectra for €124M - News

Infineon has acquired Siltectra, a Dresden-based Germany’s economic competitiveness by our SiC products are already used today in very

Reliability considerations for recent Infineon SiC diode

Microelectronics Reliability 47 (2007) Reliability considerations for recent Infineon SiC diode releases M. Holz a, *, G. Hultsch b, T. Scherg a, R

INFINEON IDT16S60C .pdf

2008528- SiC took center stage with two companies demonstrating products and Chemnitz University of Technology, Chemnitz, Germany, and Infineon,

CoolSiC™ Schottky Diode 1200V - Infineon Technologies

Products Applications Tools About Infineon Discoveries Careers Newsletter Infineon’s 1200V SiC diode combined with a Si HighSpeed 3 IGBT enables

: INFINEON IDH15S120 SIC SCHOTTKY DIODE, 78A, 1.2kV

: INFINEON IDH15S120 SIC SCHOTTKY DIODE, 78A, 1.2kV, TO-220: Pet Supplies Industrial Scientific › Industrial Electrical › Semic

GaN-on-SiC RF transistors pave the way to 5G

Infineon Technologies has introduced the first devices in a family of GaN-on-SiC RF power transistors at this years European Microwave Week. (GaN-on

Semiconductor System Solutions - Infineon Technologies

Infineon Technologies offers a wide range of semiconductor solutions, microcontrollers, LED drivers, sensors and Automotive Power Management ICs. Produc

Infineon Launches Family of GaN-on-SiC RF Power Transistors -

201598-Infineon Technologies AG of Munich, Germany (GaN) on Silicon Carbide (SiC) RF power products and services that underpin these

5th Generation 1200V thinQ! SiC Schottky Diodes, Infineon

Infineon Technologies AG expands the comprehensive SiC portfolio introducing the 5th | Article from Mena Report June 17, 2014 Apply Cancel

CoolSiC650VG6PFC-Infineon -

Mar 16, 2012 Tokyo Electron Provides Probus-SiC™, a Silicon Carbide Epitaxial Film Growth Tool to Infineon Technologies Tokyo Electron Limited

SiC|CoolSiC SiC MOSFET _y

2010427-IDH16S60C datasheet,Page:7, IDH16S60C Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rig

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Global IGBT distributor. Wide products line up fast delivery of IGBTs, IGBT modules Eupec Infineon EupecInfineon FABRIMEX FAIRCHILD Fairchild Semiconduc

Generation 1200V thinQ!™ SiC Schottky Diodes, Infineon

2014617-Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands the comprehensive SiC portfolio introducing the 5th generation1200V thinQ!™ SiC

1200V SiC MOSFET -

A method of planarizing a roughened surface of a SiC substrate includes: forming a sacrificial material on the roughened surface of the SiC substrate,

InfineonXMC4700DJIONBOARDSDK-360eet.PDF -

82008 Unterhaching Germany .31-32 SiC Power Modules , All Products RoHSinfineon power cycling silicon carbide FET

Infineon Introduces 5th Generation thinQ!™ SiC Schottky

2012926-Infineon announces the expansion of its SiC (Silicon Carbide) portfolio with the introduction of the 650V thinQ! ™ SiC Schottky Barrier Dio

Infineon starts volume production of first full-SiC-module,

of transistors based on silicon carbide (SiC). Infineon announced the lead products EASY 1B (hall 9 (Nuremberg, Germany, 16-18 May 2017)

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