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Direct analysis of silicon carbide powder by total reflection

English Magyar Home Profiles Research Units Research Output Direct analysis ofThree silicon carbide powders having different grain size distributions were

A silicon carbide room-temperature single-photon source —

Castelletto, S, Johnson, BC, Ivády, V, Stavrias, N, Umeda, T, Gali, A Ohshima, T 2014, A silicon carbide room-temperature single-photon

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Electronics | Free Full-Text | Towards Silicon Carbide VLSI

A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

SCT20N120 - Silicon carbide Power MOSFET 1200 V, 20 A, 189

Request PDF on ResearchGate | Vacancy Induced Formation of Nanoporous Silicon, Carbon and Silicon Carbide | Nanoporous semiconductors are used in a range of

zone-folded acoustic phonons in 4H and 6H silicon carbide

spectroscopy of zone-folded acoustic phonons in 4H and 6H silicon carbide language = English, volume = 27, pages = 3618--3628, journal

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electronic structure of two-dimensional silicon carbide |

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Interacting with C-terminated Surface of Silicon Carbide-

The potential for rapid adoption of wide bandgap (WBG) semiconductors, specifically silicon carbide (SiC), highlights a need to understand the drivers of

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Synthesis of silicon carbide nanowires by solid phase source

Abstract In this paper, we report a simple approach to synthesize silicon carbide (SiC) nanowires by solid phase source chemical vapor deposition

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Cree to Invest US$1 Billion to Expand Silicon Carbide Capacity

(ETV-ICP-AES) method was developed for rapid determination of binder and lattice phase aluminium in liquid-phase sintered silicon carbide (LPS-SiC)

M, Chang, B, You, T, Huang, K, Ou, X Ou, H 2018, High-Confinement, High-Q Microring Resonators on Silicon Carbide-On-Insulator (SiCOI)

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